The TS128MSQ64V6J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V6J is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features -RoHS compliant products. -JEDEC standard 1.8V ± 0.1V Power supply -VDDQ=1.8V ± 0.1V -Max clock Freq: 333MHZ; 667Mb/s/Pin. -Posted CAS -Programmable CAS Latency: 3,4,5 -Programmable Additive Latency :0, 1,2,3 and 4 -Write Latency (WL) = Read Latency (RL)-1 -Burst Length: 4,8(Interleave/nibble sequential) -Programmable sequential / Interleave Burst Mode -Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) -Off-Chip Driver (OCD) Impedance Adjustment -MRS cycle with address key programs. -On Die Termination -Serial presence detect with EEPROM